Part Number Hot Search : 
04C14 B3834 P4KE24A IPP80N04 74AUP2 P4KE24A AEP378SI KBPC351
Product Description
Full Text Search
 

To Download 2SB817E Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Power Transistor (PNP) 2SB817E
Power Transistor (PNP)
Features
* 2SB817E transistor is designed for use in general purpose power amplifier, application
Mechanical Data
Case: Terminals: Weight: TO-3P, Plastic Package Plated leads solderable per MIL-STD-750, Method 2026 0.22 ounce, 6.2 gram
TO-3P
Maximum Ratings (T Ambient=25C unless noted otherwise)
Symbol Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Power Dissipation at TC=25C 2SB817E 160 140 6.0 12 15 100 0.8 1.25 -55 to +150 Unit V V V A A W W/ C C /W C Conditions
VCBO VCEO VEBO IC ICM Ptot
Power Dissipation Derate above 25C
RJC TJ, TSTG
Thermal Resistance from Junction to Case Operating and Storage Junction Temperature Range
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415
Rev. A/AH 2008-04-16 Page 1 of 3
Power Transistor (PNP) 2SB817E
Electrical Characteristics (T Ambient=25C unless noted otherwise)
2SB817E Symbol Description Min. 100 Max. 200 2.5 1.5 100 100 0.3 7.0 0.7 V V V V V A A S S S Unit Conditions
VCE=5.0V, IC=1.0A VCE=5.0V, IC=6.0A IC=5.0mA, IE=0 IC=5.0mA, IB=0 IB=5.0mA, IC=0 IC=5.0A, IB=0.5A IC=1.0A, VCE=5.0V VCB=80V, IE=0 VEB=4.0V, IC=0
*hFE V(BR)CBO V(BR)CEO V(BR)EBO *VCE(sat) *VBE(on) ICBO IEBO ton ts tf
D.C. Current Gain 20 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Base Cut-off Current Emitter-Base Cut-off Current Turn-on Time Storage Time Fall Time 160 140 6.0 -
VCC=20V, IC=1.0A IB1=-IB2=100mA
PW=20S
*Pulse Test: Pulse Width= 300s, Duty Cycle 2.0%
Rev. A/AH 2008-04-16 www.taitroncomponents.com Page 2 of 3
Power Transistor (PNP) 2SB817E
Dimensions in mm
TO-3P
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTACOES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAUDE - SAO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN' AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2008-04-16 www.taitroncomponents.com Page 3 of 3


▲Up To Search▲   

 
Price & Availability of 2SB817E

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X